MIL-M-38510-211 Base Document:1987
Current
The latest, up-to-date edition.
Microcircuits, Digital, 32,768 Bit Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon
01-04-1987
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome resistors (NiCr), titanium-tungsten (TiW), or zapped vertical emitter as the fusible link or programming element.
| DevelopmentNote |
NOTICE 1 - Notice of Inactivation for New Design. NOTICE 2 - Notice of Validation but remains Inactive for New Design. (06/2001) New child NOT 3 2022 is added
|
| DocumentType |
Standard
|
| Pages |
75
|
| ProductNote |
New child NOT 3 2022 is added
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome resistors (NiCr), titanium-tungsten (TiW), or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the part number. A special test requirement is included in this specification to screen against devices which may contain moisture in the package materials or internal atmosphere (see freeze-out test of 4.2d).
| MIL-STD-883 Revision K:2016 | Microcircuits |
| MIL-HDBK-1331 Revision A:2003 | Parameters to be Controlled for the Specification of Microcircuits, Handbook for |
| MIL-PRF-38535 Revision K:2013 | Integrated Circuits (Microcircuits) Manufacturing, General Specification for |
| MIL-STD-1835 Revision D:2004 | Electronic Component Case Outlines |
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