MIL-M-38510-211 Notice 3 - Validation:2022
Current
The latest, up-to-date edition.
Microcircuits, Digital, 32,768 Bit Schottky, Bipolar, Programmable Read-Only Memory (PROM), Monolithic Silicon
English
03-03-2022
This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome resistors (NiCr), titanium-tungsten (TiW), or zapped vertical emitter as the fusible link or programming element.
| DocumentType |
Notice
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| Pages |
1
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| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
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This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome resistors (NiCr), titanium-tungsten (TiW), or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the part number. A special test requirement is included in this specification to screen against devices which may contain moisture in the package materials or internal atmosphere (see freeze-out test of 4.2d).
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