MIL-PRF-19500-115 Revision P:2016
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N3016 through 1N3051 and 1N3821 through 1N3828 Encapsulated (Axial Leaded and Surface Mount) and Unencapsulated, 5, 2, and 1 Percent Voltage Tolerance, Quality Levels JAN, JANTX, JANTXV, and JANHC
15-06-2016
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for 1 W, silicon, voltage regulator diodes.
| DevelopmentNote |
Supersedes MIL S 19500/115 (H) (02/2000)
|
| DocumentType |
Standard
|
| Pages |
54
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for 1 W, silicon, voltage regulator diodes. All of the diodes described by this specification sheet are a modified version of the diode which have a nominal voltage tolerance of 5 percent, 2 percent or 1 percent over the basic numbered (non-suffix) device. The non-suffix devices are not an option for this specification sheet. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance (JANHC) is provided for each unencapsulated die.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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