MIL-PRF-19500-156 Revision N:2008
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Low Level Voltage-Reference Temperature Compensated, Types 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, and 1N940B-1, Leaded and Surface Mount Packages, Quality Levels JAN, JANTX, JANTXV, and JANS, Radiation Hardened (Total Dose Only)
18-03-2008
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for 9.0 volts +\-5 percent, silicon, low bias current, voltage-reference diodes.
| DevelopmentNote |
Supersedes MIL S 19500/156 (J) (02/2000) N NOTICE 1 - Notice of Validation. (01/2017)
|
| DocumentType |
Standard
|
| Pages |
26
|
| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for 9.0 volts ±5 percent, silicon, low bias current, temperature compensated voltage-reference diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened (total ionizing dose only) product assurance are provided for quality levels JANTXV and JANS as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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