MIL-PRF-19500-158 Revision T:2009
Current
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N3154-1, THROUGH 1N3157-1, AND 1N3154UR-1 THROUGH 1N3157UR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, H
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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for 8.4 volts +/-5 percent, silicon, temperature compensated, voltage-reference diodes.
| Committee |
FSC 5961
|
| DevelopmentNote |
Supersedes MIL S 19500/158 (K) (02/2000) T NOTICE 1 - Notice of Validation. (01/2017)
|
| DocumentType |
Standard
|
| Pages |
27
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
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