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MIL-PRF-19500-159 Revision P:2009

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N821-1, 1N823-1, 1N825-1, 1N827-1, AND 1N829-1, 1N821UR-1, 1N823UR-1, 1N825UR-1, 1N827UR-1, AND 1N829UR-1, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC; RADIATION HARDENED (TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H; JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F

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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the performance requirements for 6.2 volts +/-5 percent, silicon, temperature compensated, voltage-reference diodes.

Committee
FSC 5961
DevelopmentNote
Supersedes MIL S 19500/159 (H). (02/2000) P NOTICE 1 - Notice of Validation. (01/2017)
DocumentType
Standard
Pages
37
PublisherName
US Military Specs/Standards/Handbooks
Status
Current
Supersedes

MIL-PRF-19500 Revision P:2010 SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011 TEST METHODS FOR SEMICONDUCTOR DEVICES

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