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MIL-PRF-19500-355 Revision V:2016

Current

Current

The latest, up-to-date edition.

Transistor, Unitized Dual, NPN, Silicon, Types 2N2919, 2N2920, JAN, JANTX, JANTXV, JANS, JANHC and JANKC

Available format(s)

PDF

Published date

16-11-2016

€17.95
Excluding VAT

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Specifies the performance requirements for two electrically isolated, matched NPN radiation hardened silicon transistors as one dual unit.

DevelopmentNote
Supersedes MIL S 19500/355 (D). (02/2000)
DocumentType
Standard
Pages
48
PublisherName
US Military Specs/Standards/Handbooks
Status
Current
Supersedes

This specification covers the performance requirements for two electrically isolated, matched NPN radiation hardened silicon transistors as one dual unit. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type, and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to eleven radiation levels (“E”, “K”, “U”, \"M\", \"D\", \"P\", \"L\", \"R”, “F”, “G” and “H”) are provided for JANTXV, JANS, JANHC, JANKC, JANHCD, and JANKCD product assurance levels.

MIL-PRF-19500 Revision P:2010 SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011 TEST METHODS FOR SEMICONDUCTOR DEVICES

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