MIL-PRF-19500-391 Revision P:2015
Current
The latest, up-to-date edition.
Transistor, NPN, Silicon, Low-Power, Device Types 2N3019, 2N3057A, and 2N3700,Encapsulated (Through-Hole and Surface Mount)and Unencapsulated, Radiation Hardness Assurance, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC,and JANKC
26-06-2015
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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for NPN, silicon, low-power transistors.
| DevelopmentNote |
Supersedes MIL S 19500/391 (C). (02/2000)
|
| DocumentType |
Standard
|
| Pages |
80
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eleven radiation levels are provided for quality levels JANTXV, JANS, JANHC, and JANKC. RHA level designators \"E\", \"K\", \"U\", \"M\", \"D\", \"P\", \"L\", \"R\", \"F\", \"G\", and \"H\" are appended to the device prefix to identify devices, which have passed RHA requirements.
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
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