MIL-PRF-19500-411 Revision T:2016
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Encapsulated (Through-Hole and Surface Mount Packages), and Un-Encapsulated, Device Types 1N5415 Through 1N5420, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC and JANKC
English
19-09-2016
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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for silicon rectifier diodes.
| DevelopmentNote |
Supersedes MIL S 19500/411 (02/2000)
|
| DocumentType |
Standard
|
| Pages |
23
|
| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
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| Supersedes |
This specification covers the performance requirements for fast recovery silicon rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are provided for each un encapsulated device type. Provision for radiation hardness assurance (RHA) to four radiation (\"M\", \"D\", \"R\", and \"H\") test levels is provided for JANTXV and JANS product assurance levels.
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
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