MIL-PRF-19500-420 Revision N:2016
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Power, Rectifier, Encapsulated (Through-Hole and Surface Mount Packages), and Un-Encapsulated, Types 1N5550Through 1N5554, Quality Levels JAN, JANTX, JANTXV, JANS, JANHCand JANKC
English
23-09-2016
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for silicon, general purpose, semiconductor diodes.
| DevelopmentNote |
Supersedes MIL S 19500/420. (02/2000)
|
| DocumentType |
Standard
|
| Pages |
30
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for silicon, general purpose, power rectifier semiconductor diodes. The diode is non cavity double plug construction, with high temperature metallurgical bonds (category 1) between both sides of the silicon die and terminal pins. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are provided for each un-encapsulated device type.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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