MIL-PRF-19500-427 Revision P:2013
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Power Rectifier, Encapsulated (Through-Hole and Surface Mount Packages), and Un-Encapsulated, Types 1N5614, 1N5616, 1N5618, 1N5620, 1N5622,Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
English
20-06-2013
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for silicon, hermetically sealed power rectifier diodes.
| DevelopmentNote |
Supersedes MIL S 19500/427 (02/2000)
|
| DocumentType |
Standard
|
| Pages |
24
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type.
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