MIL-PRF-19500-435 Revision N:2016
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Low-Noise Voltage Regulator, Encapsulated (Axial Lead Through-Hole and Surface Mount Packages) and Un-Encapsulated (Die), Types 1N4099 Through 1N4135, 1N4614 Through 1N4627, C and D Tolerance Suffix Devices, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
English
09-02-2016
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent.
| DevelopmentNote |
Supersedes MIL S 19500/435 (D) (02/2000)
|
| DocumentType |
Standard
|
| Pages |
33
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device (die). For JANHC and JANKC quality levels see 6.6.2.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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