MIL-PRF-19500-435 Revision N:2016
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, ENCAPSULATED (AXIAL LEAD THROUGH-HOLE AND SURFACE MOUNT PACKAGES) AND UN-ENCAPSULATED (DIE), TYPES 1N4099 THROUGH 1N4135, 1N4614 THROUGH 1N4627, C AND D TOLERANCE SUFFIX DEVICES, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
English
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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for 500 milliwatt, silicon, low-noise, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent.
| Committee |
FSC 5961
|
| DevelopmentNote |
Supersedes MIL S 19500/435 (D) (02/2000)
|
| DocumentType |
Standard
|
| Pages |
33
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
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