MIL-PRF-19500-543 Revision P:2016
Current
The latest, up-to-date edition.
Transistor, Field Effect, N-Channel, Silicon Repetitive Avalanche, Encapsulated (Through-Hole Packages) and Un-Encapsulated (Die), Types 2N6764, 2N6766, 2N6768, 2N6770,and JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
English
30-03-2016
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the requirements for N-channel, enhancement-mode, MOSFET, power transistors.
| DevelopmentNote |
Supersedes MIL S 19500/543 (D). (02/2000)
|
| DocumentType |
Standard
|
| Pages |
27
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, power transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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