MIL-PRF-19500-547 Revision D:2011
Current
The latest, up-to-date edition.
Transistor, Field Effect, N-Channel, Silicon, Power, Low-Threshold Logic Level, High Frequency, High Switching Speed, Device Types 2N6660 and 2N6661, Through Hole and Surface Mount Packages, Quality Levels JAN, JANTX, JANTXV,and JANS
29-08-2011
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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a N-channel, enhancement-mode, lowthreshold logic level, high frequency, high switching speed MOSFET, power transistor.
| DevelopmentNote |
Supersedes MIL S 19500/547. (02/2000) D NOTICE 1 - Notice of Validation. (07/2016)
|
| DocumentType |
Standard
|
| Pages |
17
|
| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
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| Supersedes |
This specification covers the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, power transistor. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
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