MIL-PRF-19500-550 Revision D:2015
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Fast-Recovery, High Current, Encapsulated (Stud and Surface Mount Packages) and Un-capsulated (Die), Types 1N6304, 1N6305, 1N6306, and R Types, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
English
18-12-2015
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes.
| DevelopmentNote |
Supersedes MIL S 19500/550 (A). (02/2000)
|
| DocumentType |
Standard
|
| Pages |
19
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for silicon, high efficiency, fast recovery, switching power rectifier diodes. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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