MIL-PRF-19500-551 Revision H:2017
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Transient Voltage Suppressor Types 1N6461 Through 1N6468, 1N6461US Through 1N6468US, and 1N6461URS Through 1N6468URS, Quality Levels JAN, JANTX, and JANTXV
English
04-12-2017
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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes.
| DevelopmentNote |
Supersedes MIL S 19500/551. (03/2000)
|
| DocumentType |
Standard
|
| Pages |
19
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for 500-watt peak pulse, power, silicon, transient voltage suppressor diodes. Three levels of product assurance (JAN, JANTX, and JANTXV) are provided for each device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
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