MIL-PRF-19500-553 Revision F:2014
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Schottky Barrier, Fast Recovery, Type 1N6391, JAN, JANTX, JANTXV, JANS, and JANHC
English
25-02-2014
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the requirements for a silicon, fast recovery, schottky barrier semiconductor diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications.
| DevelopmentNote |
Supersedes MIL S 19500/553. (02/2000)
|
| DocumentType |
Standard
|
| Pages |
17
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for a silicon, fast recovery, schottky barrier diode, intended for use as a power rectifier in rectifier recovery circuits, or as a flyback diode in power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type (die) as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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