MIL-PRF-19500-557 Revision M:2017
Current
The latest, up-to-date edition.
Transistor, Field Effect, N-Channel, Silicon ,Types 2N6796,2N6798, 2N6800, and 2N6802 JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
English
29-11-2017
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications.
| DevelopmentNote |
Supersedes MIL S 19500/557. (02/2000)
|
| DocumentType |
Standard
|
| Pages |
26
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device. Two levels of product assurance are provided for each unencapsulated device.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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