MIL-PRF-19500-586 Revision M:2017
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Rectifier, Schottky Barrier, Encapsulated (Axial Leaded and Surface Mount) and Unencapsulated, Types 1N5817-1, 1N5819-1, and 1N6761-1, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
English
15-12-2017
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for silicon, Schottky barrier diodes.
| DevelopmentNote |
Supersedes MIL S 19500/586 (B). (02/2000)
|
| DocumentType |
Standard
|
| Pages |
24
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices (die) as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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