MIL-PRF-19500-592 Revision H:2017
Current
The latest, up-to-date edition.
Transistor, Repetitive Avalanche, Field Effect, N-Channel, Silicon ,Types 2N7224, 2N7225, 2N7227, 2N7228, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
English
11-12-2017
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications.
| DevelopmentNote |
SUPERSEDES MIL S 19500/592. (02/2000)
|
| DocumentType |
Standard
|
| Pages |
30
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type die, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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