MIL-PRF-19500-595 Revision L:2019
Current
The latest, up-to-date edition.
Transistor, Repetitive Avalanche, Field Effect, P-Channel, Silicon, Types 2N7236, and2N7237, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC
English
30-01-2019
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications.
| DocumentType |
Standard
|
| Pages |
23
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device, and two levels of product assurance (JANHC and JANKC) for each unencapsulated device, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR).
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