MIL-PRF-19500-596 Revision K:2013
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SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, AND 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications.
| Committee |
FSC 5961
|
| DevelopmentNote |
Supersedes MIL S 19500/596 (C). (02/2000) K NOTICE 1 - Notice of Validation. (02/2018)
|
| DocumentType |
Standard
|
| Pages |
25
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
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