MIL-PRF-19500-596 Revision K:2013
Current
The latest, up-to-date edition.
Transistor, Field Effect, N-Channel, Silicon, Repetitive Avalanche, Types 2N7218, 2N7219, 2N7221, 2N7222, Encapsulated (Flangeand Surface Mount Packages)and Unencapsulated, Quality Levels JAN, JANTX, JANTXV, JANS, JANHC,and JANKC
17-04-2013
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a N-channel, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications.
| DevelopmentNote |
Supersedes MIL S 19500/596 (C). (02/2000) K NOTICE 1 - Notice of Validation. (02/2018)
|
| DocumentType |
Standard
|
| Pages |
25
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for N-channel, enhancement mode, MOSFET, power transistors. These transistors are intended for use in high density power switching applications and include ratings for avalanche energy (EAR and EAS) and avalanche current (IAR). Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type and two levels of product assurance (JANHC and JANKC) are provided for un-encapsulated device types (die) as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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