MIL-PRF-19500-601 Revision L:2016
Current
The latest, up-to-date edition.
Transistor, N-Channel, Field Effect, Power Radiation Hardened, Silicon, Encapsulated (Through-Hole and Surface Mount Packages), Types 2N7261and 2N7262, JANTXVR, F, G,and Hand JANSR, F, G, and H
English
23-05-2016
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened and non-hardened, power transistors.
| DevelopmentNote |
Supersedes MIL S 19500/601 (A) (08/2001)
|
| DocumentType |
Standard
|
| Pages |
28
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)) and non-hardened, power transistors. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G”, and “H”) are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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