MIL-PRF-19500-603 Revision L Amendment 2 (all previous amendments incorporated):2019
Current
The latest, up-to-date edition.
Transistor, Field Effect Radiation Hardened (Total Dose Only), N-Channel, Silicon, (Through-Hole, Surface Mount, And Carrier Board Packages), Types 2N7268, 2N7269, 2N7270, 2N7394, Jantxvr, F, G, H; Jansr, F, G, And H
English
27-06-2019
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power.
| DocumentType |
Standard
|
| Pages |
38
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| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
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| Supersedes |
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G”, and “H”) are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.
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