MIL-PRF-19500-607 Revision B:2004
Current
The latest, up-to-date edition.
Semiconductor Device, Field Effect Transistors, N-Channel and P-Channel, Silicon, Type 2N7337 JAN, JANTX, JANTXV, JANS, and JANHC (No S/S Document)
06-08-2004
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Defines the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor.
| DevelopmentNote |
Supersedes MIL S 19500/607. (02/2000) B NOTICE 1 - Notice of Validation. (07/2011) B NOTICE 2 - Notice of Validation. (05/2016)
|
| DocumentType |
Standard
|
| Pages |
23
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for N-channel, and P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS and EAR) and maximum avalanche current (IAR). One level of product assurance is provided for unencapsulated device.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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