MIL-PRF-19500-614 Revision K:2015
Superseded
A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.
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Transistor, Field Effect Radiation Hardened Encapsulated (Through-Hole and Surface Mount Packages) N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS
English
02-07-2015
30-08-2018
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for an N-channel, radiation hardened, enhancement mode, MOSFET, power transistors intended for use in high density power switching applications.
| DevelopmentNote |
Supersedes MIL S 19500/614. (02/2000)
|
| DocumentType |
Standard
|
| Pages |
25
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Superseded
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| SupersededBy | |
| Supersedes |
This specification covers the performance requirements for an N-channel, radiation hardened (total
dose and single event effects (SEE)), enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). See 6.7 for JANHC and JANKC die versions.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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