MIL-PRF-19500-614 Revision L:2018
Current
The latest, up-to-date edition.
Transistor, Field Effect Radiation Hardened Encapsulated (Through-Hole and Surface Mount Packages) N-Channel, Silicon, Types 2N7380, and 2N7381, JANTXV and JANS
English
30-08-2018
Important note : Users cannot be edited or removed once added to your Multi user PDF.| DocumentType |
Standard
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| Pages |
24
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| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
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| Supersedes |
This specification covers the performance requirements for an N-channel, radiation hardened (total
dose and single event effects (SEE)), enhancement mode, MOSFET, power transistors intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). See 6.7 for JANHC and JANKC die versions.
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