MIL-PRF-19500-615 Revision H:2017
Current
The latest, up-to-date edition.
Transistor, Field Effect Radiation Hardened Encapsulated (Through-Hole and Surface Mount Package) P-Channel, Silicon, Types 2N7382 and 2N7383, JANTXV M, D, R, and F and JANS M, D, R, and F
English
18-01-2017
Important note : Users cannot be edited or removed once added to your Multi user PDF.
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications.
| DevelopmentNote |
SUPERSEDES MIL S 19500/615 (02/2000)
|
| DocumentType |
Standard
|
| Pages |
24
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for a P-channel, radiation hardened (total dose and single event effects (SEE)), enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each device type, with avalanche energy ratings (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (\"M\", \"D\", \"R\" and \"F\") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
Access your standards online with a subscription
Features
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.