MIL-PRF-19500-616 Revision H:2015
Current
The latest, up-to-date edition.
Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast Dual, Common Cathode or Anode Center Tap, Types 1N6657 Through 1N6659 Quality Levels JAN, JANTX, JANTXV, and JANS
16-07-2015
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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for a silicon, dual high voltage, ultrafast power rectifier diodes.
| DevelopmentNote |
Supersedes MIL S 19500/616. (02/2000)
|
| DocumentType |
Standard
|
| Pages |
24
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for a silicon, dual (common anode or common cathode), high voltage, ultrafast power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type.
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
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