MIL-PRF-19500-638 Revision B:2004
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPE 2N7410, JANSD AND JANSR
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Covers performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications.
| Committee |
FSC 5961
|
| DevelopmentNote |
B NOTICE 1 - Notice of Validation. (07/2011) B NOTICE 2 - Notice of Validation. (05/2016)
|
| DocumentType |
Standard
|
| Pages |
22
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
Access your standards online with a subscription
Features
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.