MIL-PRF-19500-652 Revision C:2013
Current
The latest, up-to-date edition.
SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS
English
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a high voltage N-channel, enhancement mode, power MOSFET transistor, with avalanche energy maximum ratings (E[AS]) and maximum avalanche current (I[AS]).
| Committee |
FSC 5961
|
| DocumentType |
Standard
|
| Pages |
16
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| MIL-PRF-19500 Revision P:2010 | SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR |
| MIL-STD-750 Revision F:2011 | TEST METHODS FOR SEMICONDUCTOR DEVICES |
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