MIL-PRF-19500-655 Revision G:2015
Current
The latest, up-to-date edition.
Transistor, Field Effect Radiation Hardened P-Channel, Silicon, Types 2N7424U, 2N7425U, and 2N7426U, JANTXV and JANS
English
18-09-2015
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor.
| DocumentType |
Standard
|
| Pages |
25
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to two radiation levels (“R” and “F”) are provided.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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