MIL-PRF-19500-661 Revision F Amendment 1 (amendment incorporated):2018
Current
The latest, up-to-date edition.
Transistor, Field Effect Radiation Hardened N-Channel, Silicon, Types 2N7444, 2N7434, 2N7391, and 2N7392, JANTXVR and JANSR
English
23-11-2018
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications.
| DocumentType |
Standard
|
| Pages |
30
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| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 for JANHC and JANKC die versions.
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