MIL-PRF-19500-663 Revision G:2017
Current
The latest, up-to-date edition.
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Types 2N7431, 2N7432, and 2N7433, JANTXVR, F, G, and H; and JANSR, F, G, and H
English
14-07-2017
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
| DocumentType |
Standard
|
| Pages |
24
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G” and “H”) are provided for JANS and JANTXV product assurance levels. See 6.7 for and JANHC and JANKC die versions. See 6.8 for surface mount versions.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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