MIL-PRF-19500-664 Revision F:2017
Current
The latest, up-to-date edition.
Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Encapsulated (Surface Mount and Carrier Board Packages), Types 2N7431, 2N7432, and 2N7433, JANTXVR, F, G, and H; and JANSR, F, G, and H
English
24-07-2017
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor.
| DocumentType |
Standard
|
| Pages |
28
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to four radiation levels (“R”, “F”, “G” and “H”) are provided for JANS and JANTXV product assurance levels. See 6.7 for JANHC and JANKC die versions. See 6.8 for through hole mount versions.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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