MIL-PRF-19500-675 Revision F:2018
Current
The latest, up-to-date edition.
Transistor, Field Effect Radiation Hardened N-Channel, Silicon Types 2N7463, 2N7464, JANTXVR and JANSR
English
29-01-2018
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened power transistor.
| DocumentType |
Standard
|
| Pages |
26
|
| ProductNote |
NEW CHILD AMD 2 IS NOW ADDED
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to one radiation level “R” are provided for JANS and JANTXV product assurance level.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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