MIL-PRF-19500-683 Revision G:2018
Current
The latest, up-to-date edition.
Transistor, Field Effect, N-Channel, Radiation Hardened, Encapsulated (Surface Mount and Carrier Board Packages), Type 2N7467, JANTXVR, F, G,and Hand JANSR, F, G,and H
English
10-12-2018
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
| DevelopmentNote |
NEW CHILD NOT 1 2021 IS NOW ADDED
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| DocumentType |
Standard
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| Pages |
25
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| ProductNote |
NEW CHILD NOT 1 2021 IS NOW ADDED
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| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
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| Supersedes |
This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device. Provisions for radiation hardness assurance (RHA) to four radiation levels (\"R\", \"F\", \"G\", and \"H\") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.
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