MIL-PRF-19500-683 Revision G:2018
Current
Current
The latest, up-to-date edition.
Transistor, Field Effect, N-Channel, Radiation Hardened, Encapsulated (Surface Mount and Carrier Board Packages), Type 2N7467, JANTXVR, F, G, and H and JANSR, F, G, and H
Available format(s)
PDF
Language(s)
English
Published date
10-12-2018
Publisher
Important note : Users cannot be edited or removed once added to your Multi user PDF.This specification covers the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).
| DevelopmentNote |
NEW CHILD NOT 1 2021 IS NOW ADDED
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| DocumentType |
Standard
|
| Pages |
25
|
| ProductNote |
NEW CHILD NOT 1 2021 IS NOW ADDED
|
| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
|
| Supersedes |
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