MIL-PRF-19500-684 Revision H:2016
Current
The latest, up-to-date edition.
Transistor, Field Effect, Silicon, N-Channel, Radiation Hardened,Encapsulated (Surface Mount and Carrier Board Packages), Types 2N7472, 2N7473, and 2N7474, JANTXV and JANS
English
17-11-2016
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors.
| DocumentType |
Standard
|
| Pages |
30
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to two radiation levels (“R” and “F”) are provided for JANTXV product assurance level. See 6.7 for JANHC and JANKC die versions.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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