MIL-PRF-19500-685 Revision H:2016
Current
The latest, up-to-date edition.
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Device Types2N7475, 2N7476,and 2N7477 JANTXVRand JANSR
English
18-11-2016
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche energy maximum rating (E[AS]) and maximum avalanche current (I[AS]) for use in particular power-switching applications.
| DocumentType |
Standard
|
| Pages |
24
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for N-Channel, enhancement-mode,
MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistors, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500. See 6.7 for JANHC and JANKC die versions.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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