MIL-PRF-19500-687 Revision D:2016
Current
The latest, up-to-date edition.
Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (through-Hole Mount Package), Types 2N7509, 2N7510,and 2N7511, JANTXVD, Rand JANSD, R (No S/S Document)
English
28-04-2016
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor intended for use in high density power switching applications.
| DocumentType |
Standard
|
| Pages |
25
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE) characterization), power transistor intended for use in high density power switching applications. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to two radiation levels (“D” and “R”) are provided for JANTXV and JANS product assurance levels.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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