MIL-PRF-19500-697 Revision F Amendment 1 (amendment incorporated):2019
Current
The latest, up-to-date edition.
Transistor, Field Effect, Radiation Hardened, N-Channel, Device Type 2N7478T1, JANTXVR, F, G, and H and JANSR, F, G, and H
English
14-03-2019
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened, power transistor.
| DocumentType |
Standard
|
| Pages |
20
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects SEE), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. See 6.7 for JANHC and JANKC die versions.
Access your standards online with a subscription
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.
Important note : Users cannot be edited or removed once added to your Multi user PDF.