MIL-PRF-19500-701 Revision C:2014
Current
The latest, up-to-date edition.
Transistor, Field, Effect, N-Channel, Silicon, Radiation Hardened (Total Dose and Single Event Effects) Types 2N7491T2, 2N7492T2, and 2N7493T2, Quality Levels JANTXV and JANS
English
27-01-2014
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor.
| DocumentType |
Standard
|
| Pages |
24
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. These transistors include ratings for avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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