MIL-PRF-19500-703 Revision E Amendment 1 (amendment incorporated):2019
Current
The latest, up-to-date edition.
Transistor, Field Effect, N-Channel, Radiation Hardened, Silicon, Encapsulated (Surface Mount Package), Types 2N7479, 2N7480, and 2N7481, JANTXVR, F, G, and H and JANSR, F, G, and H
English
30-05-2019
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor.
| DocumentType |
Standard
|
| Pages |
24
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened, power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.7 for JANHC and JANKC die versions. Provisions for radiation hardness assurance (RHA) to four radiation levels (\"R\", \"F\", \"G\" and \"H\") are provided for JANTXV and JANS product assurance levels.
Access your standards online with a subscription
-
Simple online access to standards, technical information and regulations.
-
Critical updates of standards and customisable alerts and notifications.
-
Multi-user online standards collection: secure, flexible and cost effective.
Important note : Users cannot be edited or removed once added to your Multi user PDF.