MIL-PRF-19500-705 Revision E Amendment 1 (amendment incorporated):2019
Current
The latest, up-to-date edition.
Transistor, Field Effect Radiation Hardened, N-Channel, Silicon Device Types 2N7488T3, 2N7489T3, 2N7490T3, and 2N7556T3 JANTXVR and JANSR
English
17-07-2019
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor Two levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications.
| DocumentType |
Standard
|
| Pages |
23
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
| Supersedes |
This specification covers the performance requirements for a N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor Two levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications.
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