MIL-PRF-19500-713 Revision F:2018
Current
The latest, up-to-date edition.
Transistor, Field Effect, Radiation Hardened, P-Channel, Silicon, Device Types 2N7549,and 2N7550, JANTXVR, Fand JANSR, F
19-11-2018
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
| DevelopmentNote |
NEW CHILD NOT 1 2021 IS NOW ADDED.
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| DocumentType |
Standard
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| Pages |
30
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| ProductNote |
NEW CHILD NOT 1 2021 IS NOW ADDED.
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| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
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| Supersedes |
This specification covers the performance requirements for a P-channel, enhancement-mode,
MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS) for use in particular power-switching applications. Provisions for radiation hardness assurance (RHA) to three radiation levels (\"R\", “F”, and “H”) are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.
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