Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Quad Transistor, N-Channel and P-Channel, Silicon Types 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR and F and JANSR and F (No S/S Document)

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13-12-2005

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US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the performance requirements for quad N-channel and quad P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.

DevelopmentNote	NOTICE 1 - Notice of Validation. (05/2017)
DocumentType	Standard
Pages	45
PublisherName	US Military Specs/Standards/Handbooks
Status	Current

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

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MIL-PRF-19500-740 Base Document:2005

Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Quad Transistor, N-Channel and P-Channel, Silicon Types 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR and F and JANSR and F (No S/S Document)

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