MIL-PRF-19500-741 Revision A:2009
Current
The latest, up-to-date edition.
Transistor, Die, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) N-Channel and P-Channel, Silicon, Various Types, JANHC and JANKC
30-01-2009
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for N-channel and P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die.
| DocumentType |
Standard
|
| Pages |
17
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for N-channel and P-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor die. Two levels of product assurance (JANHC and JANKC) are provided for each device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance (RHA) to four radiation levels (\"G\", \"H\", \"R\" and \"F\") are provided for JANTXV and JANS product assurance levels.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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