MIL-PRF-19500-744 Revision E:2016
Current
The latest, up-to-date edition.
Transistor, Field Effect, N-Channel, Radiation Hardened, Logic-Level Silicon, Encapsulated (Surface Mount Package), Types 2N7616, Quality Levels JANTXVand JANS
25-02-2016
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Specifies the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor.
| DocumentType |
Standard
|
| Pages |
43
|
| ProductNote |
NEW CHILD AMD 3 2019 IS NOW ADDED
|
| PublisherName |
US Military Specs/Standards/Handbooks
|
| Status |
Current
|
This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor. Two levels of product assurance (JANTXV and JANS) are provided for each encapsulated device with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). Provisions for radiation hardness assurance (RHA) to two radiation levels (\"R\" and \"F\") are provided for JANTXV and JANS product assurance levels. See 6.7 for JANHC and JANKC die versions.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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