Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Device Types 2N7609U8 and 2N7609U8C, JANTXV and JANS (No S/S Document)

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25-03-2015

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US Military Specs/Standards/Handbooks

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1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Specifies the performance requirements for N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.

DocumentType	Standard
Pages	39
PublisherName	US Military Specs/Standards/Handbooks
Status	Current

MIL-PRF-19500 Revision P:2010	Semiconductor Devices, General Specification for
MIL-STD-750 Revision F:2011	Test Methods for Semiconductor Devices

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MIL-PRF-19500-758 Revision A:2015

Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Device Types 2N7609U8 and 2N7609U8C, JANTXV and JANS (No S/S Document)

Shopping Cart

MIL-PRF-19500-758 Revision A:2015

Transistor, Field Effect, Radiation Hardened N-Channel, Silicon, Device Types 2N7609U8 and 2N7609U8C, JANTXV and JANS (No S/S Document)

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