MIL-PRF-19500-759 Revision A:2012
Current
The latest, up-to-date edition.
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Dual Transistor, N-Channel and P-Channel, Logic-Level Silicon Types 2N7632UD, JANTXVR, F, and JANSR, F
20-01-2012
1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES
Describes the performance requirements for dual N-channel and P-channel, enhancement-mode, low-threshold logic level, MOSFET, radiation hardened (total dose and single event effects (SEE)), power transistor.
| DevelopmentNote |
A NOTICE 1 - Notice of Validation. (11/2016) NEW CHILD NOT 2 2021 IS NOW ADDED.
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| DocumentType |
Standard
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| Pages |
23
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| ProductNote |
NEW CHILD NOT 2 2021 IS NOW ADDED.
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| PublisherName |
US Military Specs/Standards/Handbooks
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| Status |
Current
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This specification covers the performance requirements for dual N-channel and P-channel, enhancement-mode, low-threshold logic level, MOSFET, radiation hardened (total dose and single event effects(SEE)), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions.
| MIL-PRF-19500 Revision P:2010 | Semiconductor Devices, General Specification for |
| MIL-STD-750 Revision F:2011 | Test Methods for Semiconductor Devices |
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